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334103

Sigma-Aldrich

Silicon nitride

powder, ≥99.9% trace metals basis

Synonym(s):

Trisilicon tetranitride

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About This Item

Linear Formula:
Si3N4
CAS Number:
Molecular Weight:
140.28
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

≥99.9% trace metals basis

form

powder

particle size

<1 μm

density

3.44 g/mL at 25 °C (lit.)

SMILES string

N12[Si]34N5[Si]16N3[Si]25N46

InChI

1S/N4Si3/c1-5-2-6(1)3(5)7(1,2)4(5)6

InChI key

HQVNEWCFYHHQES-UHFFFAOYSA-N

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General description

Silicon nitride based ceramics possess high fracture toughness, hardness and wear resistance, resistance to corrosion, thermal stability. Two known polymorphs of silicon nitride exist, alpha and beta Si3N4, both have hexagonal structure. A study shows that a third state, cubic spinel structure, has also been synthesized.

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Synthesis of cubic silicon nitride
Zerr A, et al
Nature, 400, 340-342 null
Silicon Nitride and Related Materials
Riley FR
Journal of the American Ceramic Society. American Ceramic Society, 83(2), 245-265 (2000)
Weihua Guan et al.
Lab on a chip, 13(7), 1431-1436 (2013-02-16)
The intrinsic charging status at the dielectric-electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges
Petru Ghenuche et al.
Physical review letters, 109(14), 143903-143903 (2012-10-23)
We demonstrate that almost 100% of incident photons can interact with a monolayer of scatterers in a symmetrical environment. Nearly perfect optical extinction through free-standing transparent nanorod arrays has been measured. The sharp spectral opacity window, in the form of
Tingyin Ning et al.
Optics express, 21(2), 2012-2017 (2013-02-08)
We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(³) (-3ω,ω,ω,ω) = (2.8 ± 0.6) ×

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