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287717

Sigma-Aldrich

Borane-ammonia complex

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technical grade, 90%

Synonym(s):

Amminetrihydroboron, Borazane

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1 G
R$295.00
10 G
R$1,823.00

About This Item

Linear Formula:
H3N · BH3
CAS Number:
Molecular Weight:
30.87
MDL number:
UNSPSC Code:
26111700
PubChem Substance ID:
NACRES:
NA.22

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grade

technical grade

Quality Level

Assay

90%

form

solid

reaction suitability

reagent type: reductant

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Design for Energy Efficiency
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sustainability

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greener alternative category

SMILES string

B.N

InChI

1S/BH3.H3N/h2*1H3

InChI key

WZMUUWMLOCZETI-UHFFFAOYSA-N

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General description

Ammonia borane, also known as borazane has high hydrogen content (about 20% mass). Thermal decomposition of borazane takes place in the temperature range of 350-410K accompanied by hydrogen release and heat evolution. It may find use as a hydrogen source in fuel cells in the future.[1]
Borane-ammonia complex is a novel material, where ammonia is tightly bound to a ligand through all four of its atoms. It is a donor-acceptor complex that is formed by electron donation from a Lewis base (NH3) to a Lewis acid (BH3). It shows a B-N bond distance of 1.564 Å.[2][3]
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Application

Borazane acts as a mild, efficient, and stereoselective reducing agent for aldehydes and ketones in protic or nonprotic media.[4][5]It can be used as a storage medium for release of hydrogen[6][7]Borazane is popularly used as an ammonia borane (AB) source for the formation of hexagonal boron nitride monolayers which are used as a substrate for graphene growth.[8][9][10][11]

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Tetrahedron Letters, 693-693 (1980)
Weng, B.; et al.
International Journal of Hydrogen Energy, 36, 10870-10870 (2011)
Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride.
Qi ZJ, et al.
Small (2014)
Michael S Bresnehan et al.
ACS nano, 6(6), 5234-5241 (2012-05-02)
Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical vapor deposition (CVD), for integration with quasi-freestanding epitaxial graphene (QFEG). We discuss the large scale
Borane- Ammonia Complexes Stabilized by Hydrogen Bonding
Hughes CC, et al.
Organic Letters, 4(23), 4109-4111 (2002)

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