Skip to Content
Merck
All Photos(1)

Key Documents

463043

Sigma-Aldrich

Disilane

electronic grade

Synonym(s):

Disilicane, Disilicoethane, Disilicon hexahydride, Silicoethane, Silicon hydride (Si2 H6 )

Sign Into View Organizational & Contract Pricing


About This Item

Linear Formula:
Si2H6
CAS Number:
Molecular Weight:
62.22
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

grade

electronic grade

Assay

≥99.998% chemical purity basis

form

gas

impurities

≤50 ppm Higher silanes
<0.2 ppm Chlorosilanes
<1 ppm Argon (Ar) + Oxygen (O2)
<1 ppm Carbon dioxide (CO2)
<1 ppm Nitrogen (N2)
<1 ppm THC
<1 ppm Water
<5 ppm Siloxanes

bp

−14.5 °C (lit.)

mp

−132.6 °C (lit.)

transition temp

critical temperature 150.9 °C

SMILES string

[SiH3][SiH3]

InChI

1S/H6Si2/c1-2/h1-2H3

InChI key

PZPGRFITIJYNEJ-UHFFFAOYSA-N

General description

Atomic number of base material: 14 Silicon

Application

Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

Features and Benefits

Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

Signal Word

Danger

Hazard Classifications

Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

2A - Gases

WGK

WGK 3

Flash Point(F)

<50.0 °F - closed cup

Flash Point(C)

< 10 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Journal of Applied Physiology, 81, 205-205 (1997)
Gen He et al.
Advanced science (Weinheim, Baden-Wurttemberg, Germany), 4(11), 1700158-1700158 (2017-12-05)
Establishing low-cost, high-throughput, simple, and accurate single nucleotide polymorphism (SNP) genotyping techniques is beneficial for understanding the intrinsic relationship between individual genetic variations and their biological functions on a genomic scale. Here, a straightforward and reliable single-molecule approach is demonstrated
O D Supekar et al.
Nanotechnology, 27(49), 49LT02-49LT02 (2016-11-12)
Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin
Jorge Alamán et al.
Polymers, 11(3) (2019-04-10)
Accurate positioning of luminescent materials at the microscale is essential for the further development of diverse application fields including optoelectronics, energy, biotechnology and anti-counterfeiting. In this respect, inkjet printing has recently attracted great interest due to its ability to precisely
Jie Li et al.
ACS nano, 11(12), 12789-12795 (2017-12-08)
F

Articles

Thin film photovoltaic devices have become increasingly important in efficiently harnessing solar energy to meet consumer demand.

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service