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87921

Sigma-Aldrich

Tetramethylsilane

≥99.0% (GC)

Synonym(s):

TMS

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About This Item

Linear Formula:
Si(CH3)4
CAS Number:
75-76-3
Molecular Weight:
88.22
Beilstein:
1696908
EC Number:
200-899-1
MDL number:
MFCD00008274
UNSPSC Code:
12352103
PubChem Substance ID:
57653278
NACRES:
NA.22

vapor pressure

11.66 psi ( 20 °C)

Assay

≥99.0% (GC)

form

liquid

autoignition temp.

842 °F

refractive index

n20/D 1.358 (lit.)
n20/D 1.359

bp

26-28 °C (lit.)

mp

−99 °C (lit.)

density

0.648 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

C[Si](C)(C)C

InChI

1S/C4H12Si/c1-5(2,3)4/h1-4H3

InChI key

CZDYPVPMEAXLPK-UHFFFAOYSA-N

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Application

Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.

Pictograms

Flame
GHS02

Signal Word

Danger

Hazard Statements

H224

Precautionary Statements

P210

Hazard Classifications

Flam. Liq. 1

Storage Class Code

3 - Flammable liquids

WGK

WGK 3

Flash Point(F)

-16.6 °F - closed cup

Flash Point(C)

-27 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
Roy E Hoffman
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted
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