455199

Tetrakis(dimethylamido)hafnium(IV)

≥99.99%

• Synonym(s): TDMAH, Tetrakis(dimethylamino)hafnium(IV)
• Linear Formula: [(CH₃)₂N]₄Hf
• CAS Number: 19782-68-4
• Molecular Weight: 354.79
• MDL number: MFCD01862473
• UNSPSC Code: 12352103
• PubChem Substance ID: 24869038
• NACRES: NA.23

Properties

• Quality Level: 100
• Assay: ≥99.99%
• form: low-melting solid
• reaction suitability: core: hafnium
• mp: 26-29 °C (lit.)
• density: 1.098 g/mL at 25 °C
• SMILES string: CN(C)[Hf](N(C)C)(N(C)C)N(C)C
• InChI: 1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
• InChI key: ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

Description

General description

Tetrakis(dimethylamido)hafnium(IV) is an organometallic compound consisting of a central hafnium atom (Hf) surrounded by four dimethylamido ligands (NMe₂). It is commonly used as a CVD/ALD precursor to produce high-quality Hf thin films. It is a solid with low melting point.

Application

Tetrakis(dimethylamido)hafnium(IV) can be used:

• As an atomic layer deposition(ALD) precursor for deposition of hafnium oxide thin films for advanced semiconductor devices.
• As a precursor to fabricate polymer-derived ceramic nanocomposites.
• To prepare HfO₂, CeO₂, and Ce-doped HfO₂ thin films on Ge substrates by using tris(isopropyl-cyclopentadienyl)cerium [Ce(iPrCp)₃] precursors with H₂O via ALD method.
• To produce Hf₃N₄ thin films with TDMAH and ammonia at low substrate temperatures at 150−250 °C.

Analysis Note

Purity excludes ~2000 ppm Zr.

Safety Information

• Pictograms: GHS02,GHS05
• Signal Word: Danger
• Hazard Statements: H228,H261,H314
• Precautionary Statements: P210 - P231 + P232 - P280 - P305 + P351 + P338 - P310 - P422
• Hazard Classifications: Flam. Sol. 1 - Skin Corr. 1B - Water-react 2
• Supplementary Hazards: EUH014
• Storage Class Code: 4.3 - Hazardous materials which set free flammable gases upon contact with water
• WGK: WGK 3
• Personal Protective Equipment: dust mask type N95 (US), Eyeshields, Gloves