593044
Aluminum nitride
nanopowder, <100 nm particle size
Synonym(s):
Aluminium nitride
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10 G
€131.00
50 G
€406.00
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10 G
€131.00
50 G
€406.00
About This Item
Linear Formula:
AlN
CAS Number:
Molecular Weight:
40.99
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
form
nanopowder
Quality Level
particle size
<100 nm
mp
>2200 °C (lit.)
density
3.26 g/mL at 25 °C (lit.)
SMILES string
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
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General description
Aluminum nitride (AlN) is a wide bandgap semiconductor with exceptional thermal conductivity, high electrical insulation, and piezoelectric properties. It is widely used in electronics, such as in high-power and high-frequency devices, as well as in optoelectronics for UV light emitters. Additionally, AlN is utilized in biomedical devices due to its biocompatibility.
Application
- This review explores the significant properties of aluminum nitride in the context of semiconductor materials, discussing its large bandgap and wide transparency range, which are advantageous for ultraviolet to mid-infrared applications (Li et al., 2021).
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
Target Organs
Lungs
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Shuangxi Nie et al.
Nanomaterials (Basel, Switzerland), 9(8) (2019-08-07)
Nanocomposites consisting of cellulose nanofibrils (CNFs) and nano-aluminum nitride (AlN) were prepared using a simple vacuum-assisted filtration process. Bleached sugarcane bagasse pulp was treated with potassium hydroxide and sodium chlorite, and was subsequently ultra-finely ground and homogenized to obtain CNFs.
Morphologically selective synthesis of nanocrystalline aluminum nitride.
Haber JA, et al.
Chemistry of Materials, 10(12), 4062-4071 (1998)
Nanocrystalline aluminum nitride: II, sintering and properties.
Panchula ML and Ying JY
American Chemical Science Journal, 86(7), 1121-1127 (2003)
Electrical and thermophysical properties of epoxy/aluminum nitride nanocomposites: Effects of nanoparticle surface modification
Peng W, et al.
Composites Part A: Applied Science and Manufacturing, 41(9), 1201-1209 (2010)
Emmanuel Defay et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 58(12), 2516-2520 (2011-12-01)
A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to
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