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790346

Sigma-Aldrich

ITO

30 nm (SEM)

Synonym(s):

Indium tin oxide, ITO

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About This Item

CAS Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23

form

nanopowder

composition

In2O3, 90%
SnO2, 10%

particle size

30 nm (SEM)

mp

1910 °C (lit.)

density

1.2 g/mL at 25 °C (lit.)

SMILES string

O=[SnH2].O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O

InChI

1S/2In.5O.Sn

InChI key

LNNWKAUHKIHCKO-UHFFFAOYSA-N

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Application

Indium Tin oxide nanoparticles have been investigated for use in the following:
  • transparent electrodes(1)
  • the formation of conductive paper and organic contaminants (2)
  • the formation of transparent conductive oxide films and magnetic nanocomposites(3)
  • electrochromic materials and as well as in biomedical applications(4)

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable


Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Conductive paper fabricated by layer-by-layer assembly of polyelectrolytes and ITO nanoparticles.
Peng CQ, et al.
Nanotechnology, 19(50) (2008)
Progress in Electrochromics and Thermochromics: Two New Applications Involving ITO Nanoparticles.
Li S, et al.
Society of Vacuum Coaters; 55th Annual Technical Conference Proceedings, 41-46 (2012)
Characterization of dip-coated ITO films derived from nanoparticles synthesized by?low-pressure spray pyrolysis.
Ogi T, et al.
Journal of Nanoparticle Research, 8(3-4), 343-350 (2006)
Generation of transparent conductive electrodes by laser consolidation of LIFT printed ITO nanoparticle layers.
Baum M, et al.
Applied Physics. A, Materials Science & Processing, 111(3), 799-805 (2013)

Articles

TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.

TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.

TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.

TiO2 exhibits wide band gap semiconductor and memristor properties electronically, with high opacity and UV absorbance optically.

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