Product Number
Brand
Product Description
Sigma-Aldrich
Titanium(IV) oxide, rutile, 99.995% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, ≥99.98% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, powder, <5 μm, ≥99.9% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, mixture of rutile and anatase, nanoparticles, <150 nm particle size (volume distribution, DLS), dispersion, 40 wt. % in H2O, 99.5% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, mixture of rutile and anatase, nanopowder, <100 nm particle size (BET), 99.5% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, nanopowder, <100 nm particle size, 99.5% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, <001>, (single crystal substrate), ≥99.9% trace metals basis, L × W × thickness 10 mm × 10 mm × 0.5 mm
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, contains 1% Mn as dopant, nanopowder, <100 nm particle size (BET), ≥97%
Sigma-Aldrich
Titanium(IV) oxide, anatase, powder, 99.8% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, anatase, powder, −325 mesh, ≥99% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, nanopowder, 21 nm primary particle size (TEM), ≥99.5% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, anatase, nanopowder, <25 nm particle size, 99.7% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, ReagentPlus®, ≥99%
Sigma-Aldrich
Titanium(IV) oxide, puriss., meets analytical specification of Ph. Eur., BP, USP, 99-100.5%