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Sigma-Aldrich

Bis(ethylcyclopentadienyl)ruthenium(II)

Synonym(s):

Diethylruthenocene

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About This Item

Linear Formula:
C7H9RuC7H9
CAS Number:
32992-96-4
Molecular Weight:
287.36
MDL number:
MFCD03427334
UNSPSC Code:
12352103
PubChem Substance ID:
24883596
NACRES:
NA.23

form

liquid

composition

Ru, 33.9-36.4% gravimetric

reaction suitability

core: ruthenium
reagent type: catalyst

refractive index

n20/D 1.5870 (lit.)

bp

100 °C/0.01 mmHg (lit.)

mp

6 °C (lit.)

density

1.3412 g/mL at 25 °C (lit.)

storage temp.

−20°C

SMILES string

[Ru].CC[C]1[CH][CH][CH][CH]1.CC[C]2[CH][CH][CH][CH]2

InChI

1S/2C7H9.Ru/c2*1-2-7-5-3-4-6-7;/h2*3-6H,2H2,1H3;

InChI key

VLTZUJBHIUUHIK-UHFFFAOYSA-N

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Application

Bis(ethylcyclopentadienyl)ruthenium(II) (Ru(EtCp)2), a metal organic is used as an atomic layer deposition precursor for Ru thin filmsand well-aligned RuO2 nanorods.

accessory

Product No.
Description
Pricing

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H315,H319,H335

Hazard Classifications

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

10 - Combustible liquids

WGK

WGK 3

Flash Point(F)

>199.9 °F - closed cup

Flash Point(C)

> 93.3 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

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Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating.
Choi SH, et al.
Journal of the Electrochemical Society, 158(6), D351-D356 (2011)
Growth and characterization of the coexistence of vertically aligned and twinned V-shaped RuO2 nanorods on nanostructural TiO2 template
Chen CA, et al.
J. Alloy Compounds, 485(1-2), 524-528 (2009)
In-situ real-time ellipsometric investigations during the atomic layer deposition of ruthenium: A process development from [(ethylcyclopentadienyl)(pyrrolyl) ruthenium] and molecular oxygen.
Knaut M, et al.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 30(1), 01A151-01A151 (2012)
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems.
Waechtler T, et al.
Microelectronic Engineering, 88(5), 684-689 (2011)

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