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Key Documents

667846

Sigma-Aldrich

BBL

Synonym(s):

Poly(benzimidazobenzophenanthroline)

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About This Item

Linear Formula:
(C20H6N4O2)n
CAS Number:
MDL number:
UNSPSC Code:
12352103
NACRES:
NA.23

description

Band gap: 1.9 eV

Quality Level

form

solid

Orbital energy

HOMO -5.9 eV 
LUMO -4.0 eV 

OPV Device Performance

ITO/MEH-PPV/BBL/Al

  • Short-circuit current density (Jsc): 1.98 mA/cm2
  • Open-circuit voltage (Voc): 0.93 V
  • Fill Factor (FF): 0.47
  • Power Conversion Efficiency (PCE): 1.1 %

ITO/PPV/BBL/Al
  • Short-circuit current density (Jsc): 2.15 mA/cm2
  • Open-circuit voltage (Voc): 1.1 V
  • Fill Factor (FF): 0.5
  • Power Conversion Efficiency (PCE): 1.5 %

semiconductor properties

N-type (mobility=0.1 cm2/V·s)
P-type (mobility=0.4 cm2/V·s)

Application

Polymer semiconductor with n-type behavior in organic field-effect transistors (FETs) and photovoltaic cells (PVs). Processed from solutions in methanesulfonic acid.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Jenekhe, S.A.; Yi, S.
Applied Physics Letters, 77, 2635-2635 (2000)
Manoj, A.G.; Narajan, K.S.
Opt. Mater., 21, 417-417 (2002)
Efficient Solar Cells from Layered Nanostructures of Donor and Acceptor Conjugated Polymers
Alam, M. M.; Jenekhe, S. A.
Chemistry of Materials, 16, 4647-4656 (2004)
Amit Babel et al.
Journal of the American Chemical Society, 125(45), 13656-13657 (2003-11-06)
Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date

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