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Sigma-Aldrich

Hafnium

turnings, crystal bar, 99.7% trace metals basis

Synonym(s):

Celtium, Hafnium element

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About This Item

Empirical Formula (Hill Notation):
Hf
CAS Number:
Molecular Weight:
178.49
MDL number:
UNSPSC Code:
12141718
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

99.7% trace metals basis

form

turnings, crystal bar

resistivity

29.6 μΩ-cm, 0°C

bp

4602 °C (lit.)

mp

2227 °C (lit.)

density

13.3 g/cm3 (lit.)

SMILES string

[Hf]

InChI

1S/Hf

InChI key

VBJZVLUMGGDVMO-UHFFFAOYSA-N

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Related Categories

Storage Class Code

11 - Combustible Solids

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

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Suresh Kumar Raman Pillai et al.
ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)
The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with
Daqin Chen et al.
Chemical communications (Cambridge, England), 48(86), 10630-10632 (2012-09-27)
Novel Yb/Er(Tm):Na(3)MF(7) (M = Zr, Hf) nanocrystals with intrinsic single-band upconversion emission, in contrast to the routine lanthanide-doped fluoride nanocrystals which show typical multi-band upconversion emissions, are reported for the first time. Specifically, the red upconversion intensity of the Yb/Er:Na(3)ZrF(7)
José Luis Olivares-Romero et al.
Journal of the American Chemical Society, 134(12), 5440-5443 (2012-03-17)
Asymmetric epoxidation of allylic and homoallylic amine derivatives catalyzed by Hf(IV)-bishydroxamic acid complexes is described. Under similar conditions, aldimine and ketimine produced oxaziridines. The sulfonyl group is demonstrated to be an effective directing group for these transformations.
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
Célia Lourenço et al.
The journal of physical chemistry. A, 116(51), 12399-12405 (2012-11-29)
Fourier transform ion cyclotron resonance mass spectrometry was used to characterize the gas-phase reactivity of Hf dipositive ions, Hf(2+)and HfO(2+), toward several oxidants: thermodynamically facile O-atom donor N(2)O, ineffective donor CO, and intermediate donors O(2), CO(2), NO, and CH(2)O. The

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