Skip to Content
Merck
All Photos(2)

Documents

366870

Sigma-Aldrich

Indium(III) phosphide

pieces, 3-20 mesh, 99.998% trace metals basis

Synonym(s):

Indium monophosphide, Indium phosphide

Sign Into View Organizational & Contract Pricing
All Photos(2)

About This Item

Linear Formula:
InP
CAS Number:
22398-80-7
Molecular Weight:
145.79
EC Number:
244-959-5
MDL number:
MFCD00016153
UNSPSC Code:
12352300
PubChem Substance ID:
24862718
NACRES:
NA.23

Quality Level

100

Assay

99.998% trace metals basis

form

pieces

reaction suitability

reagent type: catalyst
core: indium

particle size

3-20 mesh

SMILES string

P#[In]

InChI

1S/In.P

InChI key

GPXJNWSHGFTCBW-UHFFFAOYSA-N

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H350,H361,H372

Precautionary Statements

P201 - P308 + P313

Hazard Classifications

Carc. 1B - Repr. 2 - STOT RE 1

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

P J Poole et al.
Nanotechnology, 23(38), 385205-385205 (2012-09-06)
The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found
Chris Graham et al.
Optics express, 20(24), 26696-26703 (2012-11-29)
An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping
Wenyong Liu et al.
Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27)
In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface
Hidetaka Asoh et al.
Nanotechnology, 23(21), 215304-215304 (2012-05-04)
To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the
Lorenzo Romeo et al.
Nano letters, 12(9), 4490-4494 (2012-08-02)
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport
View All Related Papers

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service