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730726
Triethylgallium
packaged for use in deposition systems
Synonym(s):
Et3Ga, TEGa, triethyl gallium, TEG
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About This Item
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form
liquid
reaction suitability
core: gallium
bp
109 °C/300 mmHg (lit.)
mp
-82 °C (lit.)
density
1.067 g/mL at 25 °C
InChI
1S/3C2H5.Ga/c3*1-2;/h3*1H2,2H3;
InChI key
RGGPNXQUMRMPRA-UHFFFAOYSA-N
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General description
Atomic number of base material: 31 Gallium
signalword
Danger
hcodes
Hazard Classifications
Eye Dam. 1 - Pyr. Liq. 1 - Skin Corr. 1B - Water-react 1
Storage Class
4.2 - Pyrophoric and self-heating hazardous materials
wgk_germany
WGK 3
flash_point_f
No data available
flash_point_c
No data available
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Vossen, J. L.; Kern, W.
Thin Film Processes II, 1991, 866-866 null
Nikolay Kornienko et al.
ACS nano, 9(4), 3951-3960 (2015-04-04)
The tunable physical and electronic structure of III-V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conversion. However, their fabrication typically requires complex gas phase instrumentation or growth from high-temperature
M. Yamaguchi
Sci. Synth., 7, 387-387 (2004)
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