Skip to Content
Merck
  • Silicon impurity release and surface transformation of TiO2 anatase and rutile nanoparticles in water environments.

Silicon impurity release and surface transformation of TiO2 anatase and rutile nanoparticles in water environments.

Environmental pollution (Barking, Essex : 1987) (2013-11-05)
Xuyang Liu, Gexin Chen, Justin G Erwin, Chunming Su
ABSTRACT

Surface transformation can affect the stability, reactivity, and toxicity of titanium dioxide (TiO2) nanoparticles (NPs) in water environments. Herein, we investigated the release kinetics of Si impurity frequently introduced during NP synthesis and the resulting effect on TiO2 NP transformation in aqueous solutions. The release of Si increased from 2 h to 19 d at three pHs with the order: pH 11.2 ≥ pH 2.4 > pH 8.2. The Si release process followed parabolic kinetics which is similar to diffusion controlled dissolution of minerals, and the release magnitude followed the order: 10 × 40 nm rutile > 50 nm anatase > 30 × 40 nm rutile. FTIR data indicated preferential dissolving of less polymerized Si species on NP surface. Surface potential and particle size of TiO2 NPs remained almost constant during the 42-day monitoring, implying the unaffected stability and transport of these NPs by the incongruent dissolution of impurities.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Titanium(IV) oxide, rutile, 99.995% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, ≥99.98% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, powder, <5 μm, ≥99.9% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, mixture of rutile and anatase, nanoparticle, <250 nm particle size (DLS), paste, 53-57 wt. % in diethylene glycol monobutyl ether/ethylene glycol, 99.9% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, mixture of rutile and anatase, nanoparticles, <150 nm particle size (volume distribution, DLS), dispersion, 40 wt. % in H2O, 99.5% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, mixture of rutile and anatase, nanopowder, <100 nm particle size (BET), 99.5% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, nanopowder, <100 nm particle size, 99.5% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, mixture of rutile and anatase, nanoparticles, <100 nm particle size, dispersion, 48-52 wt. % in xylene, 99.9% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, rutile, <110>, single crystal substrate, ≥99.9% trace metals basis, L × W × thickness 10 mm × 10 mm × 0.5 mm
Sigma-Aldrich
Titanium(IV) oxide, rutile, <001>, (single crystal substrate), ≥99.9% trace metals basis, L × W × thickness 10 mm × 10 mm × 0.5 mm
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, contains 1% Mn as dopant, nanopowder, <100 nm particle size (BET), ≥97%
Sigma-Aldrich
Titanium(IV) oxide, anatase, powder, 99.8% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, anatase, powder, −325 mesh, ≥99% trace metals basis
Sigma-Aldrich
Silicon, powder, −60 mesh, 99.998% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, nanopowder, 21 nm primary particle size (TEM), ≥99.5% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Titanium(IV) oxide, anatase, nanopowder, <25 nm particle size, 99.7% trace metals basis