Skip to Content
Merck
All Photos(1)

Documents

266809

Sigma-Aldrich

Hafnium

turnings, crystal bar, 99.7% trace metals basis

Synonym(s):

Celtium, Hafnium element

Sign Into View Organizational & Contract Pricing


About This Item

Empirical Formula (Hill Notation):
Hf
CAS Number:
Molecular Weight:
178.49
MDL number:
UNSPSC Code:
12141718
PubChem Substance ID:
NACRES:
NA.23

Assay

99.7% trace metals basis

form

turnings, crystal bar

resistivity

29.6 μΩ-cm, 0°C

bp

4602 °C (lit.)

mp

2227 °C (lit.)

density

13.3 g/cm3 (lit.)

SMILES string

[Hf]

InChI

1S/Hf

InChI key

VBJZVLUMGGDVMO-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Related Categories

Storage Class Code

11 - Combustible Solids

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Célia Lourenço et al.
The journal of physical chemistry. A, 116(51), 12399-12405 (2012-11-29)
Fourier transform ion cyclotron resonance mass spectrometry was used to characterize the gas-phase reactivity of Hf dipositive ions, Hf(2+)and HfO(2+), toward several oxidants: thermodynamically facile O-atom donor N(2)O, ineffective donor CO, and intermediate donors O(2), CO(2), NO, and CH(2)O. The
Suresh Kumar Raman Pillai et al.
ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)
The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with
José Luis Olivares-Romero et al.
Journal of the American Chemical Society, 134(12), 5440-5443 (2012-03-17)
Asymmetric epoxidation of allylic and homoallylic amine derivatives catalyzed by Hf(IV)-bishydroxamic acid complexes is described. Under similar conditions, aldimine and ketimine produced oxaziridines. The sulfonyl group is demonstrated to be an effective directing group for these transformations.
Laurence Maggiorella et al.
Future oncology (London, England), 8(9), 1167-1181 (2012-10-04)
There is considerable interest in approaches that could improve the therapeutic window of radiotherapy. In this study, hafnium oxide nanoparticles were designed that concentrate in tumor cells to achieve intracellular high-energy dose deposit. Conventional methods were used, implemented in different
Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service