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Chemical infiltration during atomic layer deposition: metalation of porphyrins as model substrates.

Angewandte Chemie (International ed. in English) (2009-06-06)
Lianbing Zhang, Avinash J Patil, Le Li, Angelika Schierhorn, Stephen Mann, Ulrich Gösele, Mato Knez
RESUMEN

New uses for ALD: By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site-specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A = Ph, p-HO(3)SC(6)H(4).

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Diethylzinc solution, 1.0 M in hexanes
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Diethylzinc, ≥52 wt. % Zn basis
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Diethylzinc solution, 15 wt. % in toluene
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Diethylzinc solution, 1.0 M in heptane
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Diethylzinc, packaged for use in deposition systems