- Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.
Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.
Small (Weinheim an der Bergstrasse, Germany) (2012-04-03)
Jongho Lee, Jian Wu, Jae Ha Ryu, Zhuangjian Liu, Matthew Meitl, Yong-Wei Zhang, Yonggang Huang, John A Rogers
PMID22467638
ABSTRACT
Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations.