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Merck
  • Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces.

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces.

Advanced materials (Deerfield Beach, Fla.) (2012-10-05)
Woo Seok Choi, Christopher M Rouleau, Sung Seok A Seo, Zhenlin Luo, Hua Zhou, Timothy T Fister, Jeffrey A Eastman, Paul H Fuoss, Dillon D Fong, Jonathan Z Tischler, Gyula Eres, Matthew F Chisholm, Ho Nyung Lee
摘要

Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO(3) /SrTiO(3) heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO(3) grown at high oxygen pressure dramatically enhances interface abruptness.

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Sigma-Aldrich
钛酸锶, powder, 99%
Sigma-Aldrich
钛酸锶, nanopowder, <100 nm particle size, 99% trace metals basis
Sigma-Aldrich
钛酸锶, single crystal substrate, <100>
Sigma-Aldrich
钛酸钙, nanopowder, <100 nm particle size (BET), 99% trace metals basis