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Merck
  • Simple and reliable direct patterning method for carbon-free solution-processed metal oxide TFTs.

Simple and reliable direct patterning method for carbon-free solution-processed metal oxide TFTs.

Scientific reports (2018-08-29)
Masashi Miyakawa, Mitsuru Nakata, Hiroshi Tsuji, Yoshihide Fujisaki
摘要

Metal oxide TFT fabrication based on a solution-processing method is considered a promising alternative to conventional vacuum processing and has a number of advantages such as low cost, large-area fabrication, and process simplicity. A simple and reliable, direct patterning method for obtaining a carbon-free aqueous metal oxide film is presented herein. Patterning, which is achieved by selective photoreaction of water molecules under ultraviolet irradiation and by a safe, environment-friendly chemical etching process using a non-toxic organic acid, is followed by an annealing process at a temperature of 350 °C to obtain carbon-free metal oxide TFTs. In-Ga-Zn oxide (IGZO), TFTs on SiO2 dielectrics that were fabricated with a direct patterning method exhibited an average mobility of 4.3 cm2/V·s with good uniformity, which is comparable to TFTs formed by conventional photolithography. The TFTs exhibited stable performance with small (within 0.5 V) shifts in switch-on voltage under positive and negative bias stress. Fabrication of flexible IGZO TFTs by direct patterning was also achieved.

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Mordant Orange 1, Dye content 70 %