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Merck

Silicon nanowires for biosensing, energy storage, and conversion.

Advanced materials (Deerfield Beach, Fla.) (2013-07-06)
Yanli Wang, Tianyu Wang, Peimei Da, Ming Xu, Hao Wu, Gengfeng Zheng
ABSTRACT

Semiconducting silicon nanowires (SiNWs) represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, structure, morphology, doping, and assembly of SiNWs, in both individual and array format, as well as incorporation with other materials, offers a nanoscale building block with unique electronic, optoelectronic, and catalytic properties, thus allowing for a variety of exciting opportunities in the fields of life sciences and renewable energy. This review provides a brief summary of SiNW research in the past decade, from the SiNW synthesis by both the top-down approaches and the bottom-up approaches, to several important biological and energy applications including biomolecule sensing, interfacing with cells and tissues, lithium-ion batteries, solar cells, and photoelectrochemical conversion.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Silicon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, rod, 50mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
Silicon, rod, 50mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
Silicon, rod, 100mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 100mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 100mm, diameter 25mm, crystalline, 100%
Silicon, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, disks, 13mm, thickness 0.38mm, single crystal, 100%
Silicon, rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -100, 100%