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蒸汽壓力
<0.01 mmHg ( 25 °C)
化驗
99.9% trace metals basis
形狀
nanopowder
反應適用性
reagent type: catalyst
core: indium
粒徑
<100 nm (TEM)
密度
7.18 g/mL at 25 °C (lit.)
SMILES 字串
O=[In]O[In]=O
InChI
1S/2In.3O
InChI 密鑰
SHTGRZNPWBITMM-UHFFFAOYSA-N
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一般說明
Indium(III)oxide is a versatile compound with significant applications in electronics,optics, and materials science. It is widely employed in the synthesis of transparentconducting oxides (TCOs), particularly for flat-panel displays, and solarcells, due to its electrical conductivity and optical transparency. Insemiconductor technology, it is used for making indium tin oxide (ITO),enhancing the performance of electronic devices, and is sensitive to variousgases, making it suitable for gas sensing applications, particularly indetecting hazardous gases.
應用
- 胺基修饰表面受阻路易斯对用于CO2光催化：用含有胺基修饰表面受阻路易斯对的氧化铟氢氧化物，增强CO2还原的光催化性能(Q Guan et al., 2024)。
- 光激发增强气体传感能力：研究通过400 nm紫外光激发法提高金属氧化物（包括氧化铟）半导体化学电阻的气体传感性能(S Paul et al., 2024)。
- 铟(III)络合物的工业应用和纳米颗粒合成：综述三价铟络合物作为催化剂和前体在各种工业中的应用，以及氧化铟等纳米颗粒的合成(TO Ajiboye et al., 2024)。
- Ag/In2O3反蛋白石合成：详述银/氧化铟反蛋白石结构的合成和前景，它们因为光学特性具有半导体应用潜力(AV Lyutova et al., 2024)。
- 光催化生成羟基自由基和锰物种：研究用氧化铟增强高锰酸盐的光催化性能，以在可见光下高效去除微污染物(J Li et al., 2024)
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
WGK 3
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
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The growth of In(2)O(3) on cubic Y-stabilized ZrO(2)(001) by molecular beam epitaxy leads to formation of nanoscale islands which may tilt relative to the substrate in order to help accommodate the 1.7% tensile mismatch between the epilayer and the substrate.
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In(2)O(3)@SiO(2) core-shell nanoparticles were prepared using an organic solution synthesis approach and reverse-microemulsion technique. In order to explore the availability of various silica encapsulations, a partial phase diagram for this ternary system consisting of hexane/cyclohexane (1:29 wt), surfactant (polyoxyethylene(5)nonylphenyl ether
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With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
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