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544876

Sigma-Aldrich

氧化铟锡

nanopowder, <50 nm particle size

别名:

ITO

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About This Item

CAS号:
50926-11-9
MDL號碼:
MFCD00171662
分類程式碼代碼:
12352302
PubChem物質ID:
24878790
NACRES:
NA.23

形狀

nanopowder

成份

In2O3, 90%
SnO2, 10%

表面積

27 m2/g

粒徑

<50 nm

mp

1910 °C (lit.)

密度

1.2 g/mL at 25 °C (lit.)

SMILES 字串

O=[SnH2].O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O.O=[In]O[In]=O

InChI

1S/2In.5O.Sn

InChI 密鑰

LNNWKAUHKIHCKO-UHFFFAOYSA-N

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相关类别

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Gloves

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Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

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Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

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