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  • CMOS-compatible fabrication of room-temperature single-electron devices.

CMOS-compatible fabrication of room-temperature single-electron devices.

Nature nanotechnology (2008-10-08)
Vishva Ray, Ramkumar Subramanian, Pradeep Bhadrachalam, Liang-Chieh Ma, Choong-Un Kim, Seong Jin Koh
ABSTRACT

Devices in which the transport and storage of single electrons are systematically controlled could lead to a new generation of nanoscale devices and sensors. The attractive features of these devices include operation at extremely low power, scalability to the sub-nanometre regime and extremely high charge sensitivity. However, the fabrication of single-electron devices requires nanoscale geometrical control, which has limited their fabrication to small numbers of devices at a time, significantly restricting their implementation in practical devices. Here we report the parallel fabrication of single-electron devices, which results in multiple, individually addressable, single-electron devices that operate at room temperature. This was made possible using CMOS fabrication technology and implementing self-alignment of the source and drain electrodes, which are vertically separated by thin dielectric films. We demonstrate clear Coulomb staircase/blockade and Coulomb oscillations at room temperature and also at low temperatures.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Silicon monoxide, pieces, 3-10 mm, 99.99% trace metals basis
Sigma-Aldrich
Silicon monoxide, powder, −325 mesh