Skip to Content
Merck
  • Achromatic elemental mapping beyond the nanoscale in the transmission electron microscope.

Achromatic elemental mapping beyond the nanoscale in the transmission electron microscope.

Physical review letters (2013-05-21)
K W Urban, J Mayer, J R Jinschek, M J Neish, N R Lugg, L J Allen
ABSTRACT

Newly developed achromatic electron optics allows the use of wide energy windows and makes feasible energy-filtered transmission electron microscopy (EFTEM) at atomic resolution. In this Letter we present EFTEM images formed using electrons that have undergone a silicon L(2,3) core-shell energy loss, exhibiting a resolution in EFTEM of 1.35 Å. This permits elemental mapping beyond the nanoscale provided that quantum mechanical calculations from first principles are done in tandem with the experiment to understand the physical information encoded in the images.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm