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Merck

Wafer-level photocatalytic water splitting on GaN nanowire arrays grown by molecular beam epitaxy.

Nano letters (2011-05-17)
Defa Wang, Adrien Pierre, Md Golam Kibria, Kai Cui, Xueguang Han, Kirk H Bevan, Hong Guo, Suzanne Paradis, Abou-Rachid Hakima, Zetian Mi
RESUMEN

We report on the achievement of wafer-level photocatalytic overall water splitting on GaN nanowires grown by molecular beam epitaxy with the incorporation of Rh/Cr(2)O(3) core-shell nanostructures acting as cocatalysts, through which H(2) evolution is promoted by the noble metal core (Rh) while the water forming back reaction over Rh is effectively prevented by the Cr(2)O(3) shell O(2) diffusion barrier. The decomposition of pure water into H(2) and O(2) by GaN nanowires is confirmed to be a highly stable photocatalytic process, with the turnover number per unit time well exceeding the value of any previously reported GaN powder samples.

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Sigma-Aldrich
Chromium(III) oxide, powder, ≥98%
Sigma-Aldrich
Chromium(III) oxide, powder, 99.9% trace metals basis
Sigma-Aldrich
Chromium(III) oxide, nanopowder, <100 nm particle size (TEM), 98% trace metals basis
Sigma-Aldrich
Chromium(III) oxide, SAJ first grade, ≥99.0%