推荐产品
等級
certified reference material
agency
IRMM®
同位素純度
32S
製造商／商標名
JRC
濃度
371.96 μmol/kg±0.57 μmol/kg 32S in 2.8 M HNO3
應用
general analytical
格式
single component solution
質量偏移
depleted
SMILES 字串
[32S]
InChI
1S/S/i1+0
InChI 密鑰
NINIDFKCEFEMDL-IGMARMGPSA-N
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相关类别
分析報告
For more information please see:
IRMM643
IRMM643
法律資訊
IRMM is a registered trademark of European Commission
訊號詞
Danger
危險聲明
危險分類
Acute Tox. 4 Inhalation - Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B
安全危害
儲存類別代碼
8A - Combustible corrosive hazardous materials
水污染物質分類（WGK）
WGK 1
Beata Olas et al.
Chemico-biological interactions, 220, 20-24 (2014-06-15)
Hydrogen sulfide (H2S) is a well known toxic gas at high levels. However, at physiological levels, H2S may play a role in the pathogenesis of various cardiovascular diseases. The objective was to study the effects of exogenous H2S on the
Jean-Michel Paquette et al.
Clinical therapeutics, 36(11), 1650-1664 (2014-09-17)
Trimebutine 3-thiocarbamoylbenzenesulfonate (GIC-1001) is a new drug intended to be used for the management of visceral pain in patients undergoing sedation-free, full colonoscopy. The objectives of this Phase I, single-center, randomized, double-blinded, placebo-controlled, integrated study were to evaluate the safety
Hui Li et al.
Journal of virology, 89(10), 5557-5568 (2015-03-06)
Hydrogen sulfide (H2S) is an endogenous gaseous mediator that has gained increasing recognition as an important player in modulating acute and chronic inflammatory diseases. However, its role in virus-induced lung inflammation is currently unknown. Respiratory syncytial virus (RSV) is a
Jean-Roch Mouret et al.
Journal of agricultural and food chemistry, 63(12), 3271-3278 (2015-03-13)
The knowledge of gas-liquid partitioning of aroma compounds during winemaking fermentation could allow optimization of fermentation management, maximizing concentrations of positive markers of aroma and minimizing formation of molecules, such as hydrogen sulfide (H2S), responsible for defects. In this study
Dae-Hwan Kim et al.
Nanoscale, 6(23), 14549-14554 (2014-10-29)
A high-quality Sb₂S₃ thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb₂S₃ absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very
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