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About This Item
Linear Formula:
SiC
CAS Number:
Molecular Weight:
40.10
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
form
powder
particle size
-200 mesh
mp
2700 °C (lit.)
density
3.22 g/mL at 25 °C (lit.)
SMILES string
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
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General description
Silicon carbide (SiC) is a semiconductor based material that consists of a closed packed stacking of double layers of silicon and carbon. It has an excellent thermo-mechanical property that makes it useful in a variety of electronic and optoelectronic applications.
Application
SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices(OLEDs), UV detectors, high temperature electronics (nuclear electronics), high frequency devices
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.
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Find documentation for the products that you have recently purchased in the Document Library.
Properties of silicon carbide (1995)
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Optical polarization of nuclear spins in silicon carbide
Falk AL, et al.
Physical Review Letters, 114(24), 247603-247603 (2015)
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
Whitaker B, et al.
IEEE Transactions on Power Electronics, 29(5), 2606-2617 (2013)
High efficiency GaN-based LEDs and lasers on SiC
Edmond J, et al.
Journal of Crystal Growth, 272(1-4), 242-250 (2004)
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