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IRMM526C

Niobium

IRMM®, certified reference material, 0.5 mm wire

Synonym(s):

Columbium

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About This Item

Empirical Formula (Hill Notation):
Nb
CAS Number:
7440-03-1
Molecular Weight:
92.91
MDL number:
MFCD00011126
UNSPSC Code:
41116107
PubChem Substance ID:
329815715
NACRES:
NA.24

grade

certified reference material

Agency

IRMM®

manufacturer/tradename

JRC

resistivity

13-16 μΩ-cm, 20°C

bp

4742 °C (lit.)

mp

2468 °C (lit.)

density

8.57 g/mL at 25 °C (lit.)

application(s)

general analytical

format

matrix material

SMILES string

[Nb]

InChI

1S/Nb

InChI key

GUCVJGMIXFAOAE-UHFFFAOYSA-N

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Analysis Note

For more information please see:
IRMM526C

Legal Information

IRMM is a registered trademark of European Commission

Storage Class Code

13 - Non Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Christos D Malliakas et al.
Journal of the American Chemical Society, 135(5), 1719-1722 (2013-01-23)
2H-NbSe(2) is a canonical Charge-Density-Wave (CDW) layered material the structural details of which remained elusive. We report the detailed structure of 2H-NbSe(2) below the CDW transition using a (3 + 2)-dimensional crystallographic approach on single crystal X-ray diffraction data collected
Jason S Pelc et al.
Optics express, 20(25), 27510-27519 (2012-12-25)
Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. We implement a downconversion quantum interface, where the single photons emitted from a semiconductor quantum dot at 910 nm are downconverted to 1560 nm
Tzyy-Jiann Wang et al.
Optics express, 20(27), 28119-28124 (2012-12-25)
We report ultra-smooth LiNbO(3) microdisk resonators fabricated by selective ion implantation, chemical etching, and thermal treatment. The undercut microdisk structure is produced by chemically etching the buried lattice damage layer formed by selective ion implantation. By thermal treatment, surface tension
Huaxiang Yi et al.
Optics express, 20(25), 27562-27568 (2012-12-25)
We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also
Anjan Soumyanarayanan et al.
Proceedings of the National Academy of Sciences of the United States of America, 110(5), 1623-1627 (2013-01-16)
The competition between proximate electronic phases produces a complex phenomenology in strongly correlated systems. In particular, fluctuations associated with periodic charge or spin modulations, known as density waves, may lead to exotic superconductivity in several correlated materials. However, density waves
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