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  • Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.

Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.

Small (Weinheim an der Bergstrasse, Germany) (2012-04-03)
Jongho Lee, Jian Wu, Jae Ha Ryu, Zhuangjian Liu, Matthew Meitl, Yong-Wei Zhang, Yonggang Huang, John A Rogers
ZUSAMMENFASSUNG

Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations.

MATERIALIEN
Produktnummer
Marke
Produktbeschreibung

Sigma-Aldrich
Gallium-Phosphid, (single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Indium(III)-phosphid, pieces, 3-20 mesh, 99.998% trace metals basis