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Sigma-Aldrich

Hafnium

wire, diam. 1.0 mm, ≥99.9% trace metals basis (purity excludes ~2% zirconium)

Synonym(e):

Celtium, Hafnium element

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About This Item

Empirische Formel (Hill-System):
Hf
CAS-Nummer:
7440-58-6
Molekulargewicht:
178.49
EG-Nummer:
231-166-4
MDL-Nummer:
MFCD00011032
UNSPSC-Code:
12352300
PubChem Substanz-ID:
24856159

Qualitätsniveau

100

Assay

≥99.9% trace metals basis (purity excludes ~2% zirconium)

Form

wire

Widerstandsfähigkeit

29.6 μΩ-cm, 0°C

Durchmesser

1.0 mm

bp

4602 °C (lit.)

mp (Schmelzpunkt)

2227 °C (lit.)

Dichte

13.3 g/cm3 (lit.)

SMILES String

[Hf]

InChI

1S/Hf

InChIKey

VBJZVLUMGGDVMO-UHFFFAOYSA-N

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Menge

2 g = 20 cm

Lagerklassenschlüssel

13 - Non Combustible Solids

WGK

WGK 1

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

Eyeshields, Gloves, type N95 (US)

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Suresh Kumar Raman Pillai et al.
ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)
The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with
José Luis Olivares-Romero et al.
Journal of the American Chemical Society, 134(12), 5440-5443 (2012-03-17)
Asymmetric epoxidation of allylic and homoallylic amine derivatives catalyzed by Hf(IV)-bishydroxamic acid complexes is described. Under similar conditions, aldimine and ketimine produced oxaziridines. The sulfonyl group is demonstrated to be an effective directing group for these transformations.
Daqin Chen et al.
Chemical communications (Cambridge, England), 48(86), 10630-10632 (2012-09-27)
Novel Yb/Er(Tm):Na(3)MF(7) (M = Zr, Hf) nanocrystals with intrinsic single-band upconversion emission, in contrast to the routine lanthanide-doped fluoride nanocrystals which show typical multi-band upconversion emissions, are reported for the first time. Specifically, the red upconversion intensity of the Yb/Er:Na(3)ZrF(7)
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
Célia Lourenço et al.
The journal of physical chemistry. A, 116(51), 12399-12405 (2012-11-29)
Fourier transform ion cyclotron resonance mass spectrometry was used to characterize the gas-phase reactivity of Hf dipositive ions, Hf(2+)and HfO(2+), toward several oxidants: thermodynamically facile O-atom donor N(2)O, ineffective donor CO, and intermediate donors O(2), CO(2), NO, and CH(2)O. The
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