Structural characteristics of ternary In(x)Ga(1-x)As nanowires on Si (111) grown via Au-catalyzed VLS.

Structural characteristics of ternary In(x)Ga(1-x)As nanowires on Si (111) grown via Au-catalyzed VLS.

Journal of nanoscience and nanotechnology (2013-07-19)

Jae Cheol Shin, Do Yang Kim, Jae Hyung Park, Si Duck Oh, Hang Ju Ko, Myung-Soo Han, Jae Hun Kim, Kyoung Jin Choi, Hyo Jin Kim

PMID23858890

ABSTRACT

We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW array grown under optimized condition exceeds 1 x 10(8)/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the In(x)Ga(1-x)As nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.

MATERIALS

Product Number

Brand

Product Description

343250

Sigma-Aldrich

Silicon, pieces, 99.95% trace metals basis

215619

Sigma-Aldrich

Silicon, powder, −325 mesh, 99% trace metals basis

647535

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647799

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Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

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Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

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Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

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Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

647772

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Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647764

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646687

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Sigma-Aldrich

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