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Unusual role of epilayer-substrate interactions in determining orientational relations in van der Waals epitaxy.

Proceedings of the National Academy of Sciences of the United States of America (2014-11-12)
Lei Liu, David A Siegel, Wei Chen, Peizhi Liu, Junjie Guo, Gerd Duscher, Chong Zhao, Hao Wang, Wenlong Wang, Xuedong Bai, Kevin F McCarty, Zhenyu Zhang, Gong Gu
RÉSUMÉ

Using selected-area low-energy electron diffraction analysis, we showed strict orientational alignment of monolayer hexagonal boron nitride (h-BN) crystallites with Cu(100) surface lattices of Cu foil substrates during atmospheric pressure chemical vapor deposition. In sharp contrast, the graphene-Cu(100) system is well-known to assume a wide range of rotations despite graphene's crystallographic similarity to h-BN. Our density functional theory calculations uncovered the origin of this surprising difference: The crystallite orientation is determined during nucleation by interactions between the cluster's edges and the substrate. Unlike the weaker B- and N-Cu interactions, strong C-Cu interactions rearrange surface Cu atoms, resulting in the aligned geometry not being a distinct minimum in total energy. The discovery made in this specific case runs counter to the conventional wisdom that strong epilayer-substrate interactions enhance orientational alignment in epitaxy and sheds light on the factors that determine orientational relation in van der Waals epitaxy of 2D materials.

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Sigma-Aldrich
Boron nitride, powder, ~1 μm, 98%
Sigma-Aldrich
Boron nitride, nanopowder, <150 nm avg. part. size (TEM), 99% trace metals basis