Room-temperature electron spin amplifier based on Ga(In)NAs alloys.

Room-temperature electron spin amplifier based on Ga(In)NAs alloys.

Advanced materials (Deerfield Beach, Fla.) (2012-10-31)

Yuttapoom Puttisong, Irina A Buyanova, Aaron J Ptak, Charles W Tu, Lutz Geelhaar, Henning Riechert, Weimin M Chen

ABSTRACT

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

MATERIALI

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651486

Sigma-Aldrich

Gallium arsenide, (single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

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