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High quantum efficiency GaP avalanche photodiodes.

Optics express (2011-10-15)
Dion McIntosh, Qiugui Zhou, Yaojia Chen, Joe C Campbell
RÉSUMÉ

Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than previous work.

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Sigma-Aldrich
Gallium phosphide, (single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm