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920126

Sigma-Aldrich

Graphene, monolayer film

4 in diameter, CVD on silicon wafer, large grain, avg. no. of layers, 1

Synonyme(s) :

Roll-to-Roll graphene

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About This Item

Formule empirique (notation de Hill):
C
Numéro CAS:
Poids moléculaire :
12.01
Code UNSPSC :
12141908
Nomenclature NACRES :
NA.23

product name

R2R Monolayer large grain CVD graphene on silicon wafer, 4 in diameter, avg. no. of layers, 1

Niveau de qualité

Description

Growth method: roll-to-roll CVD
Wafer: SiO2 (300nm) Si
Number of layer: Monolayer
Raman intensity 2D/G: ≥1.5

Caractéristiques

avg. no. of layers 1

Résistance de la couche

280 Ω/sq ±10%

Taille

110 μm × 110 μm ± 10% , grain size

Couverture de surface

surface coverage >98%

Transmittance

>97%

Propriétés du semi-conducteur

(mobility>3000 cm2/V·s) (Hall effect measurements)

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Description générale

Roll-to-roll, high-quality, monolayer CVD graphene with large grain size (∼110μm2) on 4 inch silicon wafer.

Application

Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.
The roll-to-roll process allows continuous, large scale graphene production.
This large grain size graphene product on silicon wafer is ready to use, helps you minimize process time, and increase success rate. This product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based FET, CVD graphene based sensors, and heterostructure based micro/nano electronics.

Application examples:
  • Ultrafast Transistor
  • Optical devices
  • Bio/Gas Sensor
  • Transparent Electrode
  • Flexible Display
  • Smart Coating
  • Thermal management

Attention

Be cautious not to drop
Keep away from contamination, heat, dust and flame etc.

Stockage et stabilité

Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.

Informations légales

Product of LG Electronics, R&D use only

Code de la classe de stockage

11 - Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3


Certificats d'analyse (COA)

Recherchez un Certificats d'analyse (COA) en saisissant le numéro de lot du produit. Les numéros de lot figurent sur l'étiquette du produit après les mots "Lot" ou "Batch".

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Consulter la Bibliothèque de documents

Integrating graphene into semiconductor fabrication lines.
Daniel Neumaier et al.
Nature materials, 18(6), 525-529 (2019-05-23)
Hao-Ling Tang et al.
ACS nano, 11(12), 12817-12823 (2017-11-29)
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness
Bing Deng et al.
Advanced materials (Deerfield Beach, Fla.), 31(9), e1800996-e1800996 (2018-10-03)
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain

Articles

Review on 1D vdWHs: Discusses materials, synthesis, optoelectronic applications, challenges, and future perspectives for 1D vdWH-based devices.

Review on 1D vdWHs: Discusses materials, synthesis, optoelectronic applications, challenges, and future perspectives for 1D vdWH-based devices.

Review on 1D vdWHs: Discusses materials, synthesis, optoelectronic applications, challenges, and future perspectives for 1D vdWH-based devices.

Review on 1D vdWHs: Discusses materials, synthesis, optoelectronic applications, challenges, and future perspectives for 1D vdWH-based devices.

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