Resistive switching effect in titanium oxides.

Resistive switching effect in titanium oxides.

Journal of nanoscience and nanotechnology (2014-04-23)

Zhensen Tang, Yaqing Chi, Liang Fang, Rulin Liu, Xun Yi

ABSTRACT

Resistive switching (RS) phenomena have been vigorously investigated in a large variety of materials and highlighted for its preeminent potential for the future nonvolatile semiconductor memory applications or reconfigurable logic circuits. Among the various resistive switching materials, the binary metal oxides demonstrate more advantageous for micro- or nano-electronics applications due to their simpler fabrication process and compatibility with conventional CMOS technology, though the mechanisms are controversial due to the diversity of RS effects. This review mainly focuses on the current understanding of the microscopic nature of RS in titanium oxides, in which the working mechanisms can be categorized into thermochemical metallization mechanism, valence change mechanism, and electrostatic/electronic mechanism. The approaches developed to investigate the RS and the specific switching processes related to different mechanisms are addressed. Since titanium oxides are oxygen-vacancy doped semiconductors, the role of defects is analyzed in detail and possible effective strategies to improve the performance of RS are addressed.

MATERIALS

Product Number

Brand

Product Description

IRMM531B

Titanium, IRMM^®, certified reference material, 0.5 mm foil

348791

Sigma-Aldrich

Titanium, foil, thickness 0.127 mm, 99.7% trace metals basis

266035

Sigma-Aldrich

Titanium, wire, diam. 1.0 mm, 99.99% trace metals basis

IRMM531C

Titanium, IRMM^®, certified reference material, 0.5 mm wire

369489

Sigma-Aldrich

Titanium, foil, thickness 2.0 mm, 99.7% trace metals basis

267902

Sigma-Aldrich

Titanium, wire, diam. 0.81 mm, 99.7% trace metals basis

460400

Sigma-Aldrich

Titanium, wire, diam. 0.25 mm, 99.7% trace metals basis

305812

Sigma-Aldrich

Titanium, 5-10 mm, ≥99.99% trace metals basis (purity exclusive of Na and K content)

348848

Sigma-Aldrich

Titanium, foil, thickness 0.025 mm, 99.98% trace metals basis

GF65336700

Titanium, rod, 200mm, diameter 2mm, annealed, 99.6+%

GF76772391

Titanium, rod, 100mm, diameter 10mm, annealed, 99.6+%

GF87716997

Titanium, rod, 100mm, diameter 16mm, as drawn, 99.99+%

GF06082286

Titanium, microfoil, disks, 10mm, thinness 1.0μm, specific density 429μg/cm², permanent mylar 3.5μm support, 99.6+%

GF03916290

Titanium, rod, 490mm, diameter 2mm, annealed, 99.6+%

GF68670366

Titanium, tube, 1220mm, outside diameter 2.03mm, inside diameter 1.55mm, wall thickness 0.24mm, annealed, 99.6+%

GF82517722

Titanium, tube, 1000mm, outside diameter 6.35mm, inside diameter 4.57mm, wall thickness 0.89mm, annealed, 99.6+%

GF50171318

Titanium, rod, 25mm, diameter 16mm, as drawn, 99.99+%

GF03838282

Titanium, rod, 500mm, diameter 1.5mm, annealed, 99.6+%

GF04311638

Titanium, rod, 100mm, diameter 6mm, annealed, 99.6+%

GF25290581

Titanium, tube, 1000mm, outside diameter 25.4mm, inside diameter 23.62mm, wall thickness 0.89mm, annealed, 99.6+%

GF20882998

Titanium, rod, 200mm, diameter 5mm, annealed, 99.6+%

GF65694426

Titanium, tube, 100mm, outside diameter 1.6mm, inside diameter 1.2mm, wall thickness 0.2mm, hard, 99.6+%

GF16031843

Titanium, mesh, 100x100mm, nominal aperture 0.19mm, wire diameter 0.23mm, 60x60 wires/inch, open area 20%, twill weave

GF61322699

Titanium, rod, 100mm, diameter 2mm, annealed, 99.6+%

GF91859967

Titanium, rod, 100mm, diameter 9.5mm, annealed, 99.99+%

GF66991179

Titanium, rod, 100mm, diameter 2mm, as drawn, 99.99+%

GF31127712

Titanium, rod, 10mm, diameter 50mm, 99.99+%

GF54883581

Titanium, rod, 1000mm, diameter 3.0mm, annealed, 99.6+%

GF23916618

Titanium, microfoil, disks, 25mm, thinness 0.5μm, specific density 225.4μg/cm², permanent mylar 3.5μm support, 99.6+%

GF58567067

Titanium, rod, 100mm, diameter 5mm, annealed, 99.6+%