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  • n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups.

n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups.

Journal of the American Chemical Society (2005-10-27)
Shinji Ando, Ryo Murakami, Jun-ichi Nishida, Hirokazu Tada, Youji Inoue, Shizuo Tokito, Yoshiro Yamashita
PMID16248617
ABSTRACT

Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.