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725471

Sigma-Aldrich

Bis(methyl-η5−cyclopentadienyl)methoxymethylzirconium

packaged for use in deposition systems

Synonym(s):

ZRCMMM, ZrD-CO4

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About This Item

Linear Formula:
Zr(CH3C5H4)2CH3OCH3
Molecular Weight:
295.53
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

form

liquid

reaction suitability

core: zirconium

color

colorless

bp

110 °C/0.5 mmHg (lit.)

density

1.27 g/mL±0.01 g/mL at 25 °C (lit.)

SMILES string

C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC

InChI

1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1

InChI key

LFGIFPGCOXPKMG-UHFFFAOYSA-N

General description

Atomic number of base material: 40 Zirconium

Application

Advanced precursor for atomic layer deposition of ZrO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

Features and Benefits

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

Packaging

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.

Pictograms

Exclamation mark

Signal Word

Warning

Hazard Statements

Precautionary Statements

Hazard Classifications

Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2

Storage Class Code

10 - Combustible liquids not in Storage Class 3

WGK

WGK 3

Flash Point(F)

226.4 °F

Flash Point(C)

108 °C


Certificates of Analysis (COA)

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J. W. Elama
Applied Physics Letters, 91, 253123-253123 (2007)
Gutsche, M.; Seidl, H.; Luetzen J.; Birner, A.;
International Electron Devices Meeting, 18-18 (2001)
High-k gate dielectrics: current status and material properties considerations
Wilk, G.D.; Wallace, R.M.; Anthony, J.M.
Journal of Applied Physics, 89, 5243-5243 (2001)

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Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

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