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Sigma-Aldrich

Indium

powder, 99.99% trace metals basis

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About This Item

Fórmula empírica (Notação de Hill):
In
Número CAS:
7440-74-6
Peso molecular:
114.82
Número CE:
231-180-0
Número MDL:
MFCD00134048
Código UNSPSC:
12141719
ID de substância PubChem:
24856497
NACRES:
NA.23

pressão de vapor

<0.01 mmHg ( 25 °C)

Ensaio

99.99% trace metals basis

forma

powder

resistividade

8.37 μΩ-cm

pf

156.6 °C (lit.)

densidade

7.3 g/mL at 25 °C (lit.)

cadeia de caracteres SMILES

[In]

InChI

1S/In

chave InChI

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Descrição geral

Indium is a silvery-white soft metal with aface-centered tetragonal crystalline structure. It becomes superconductingat 3.37 K. It improves alloys′ hardness, corrosion resistance, andstrength.

Aplicação

Indium can be used as a:

  • Dopant to tune the electrical and photoelectrical properties of CdSe nanowires.
  • Negative electrode material for Mg-ion batteries.
  • Reducing agent in many organic transformations because of its low first ionization potential.

Pictogramas

FlameExclamation mark
GHS02,GHS07

Palavra indicadora

Danger

Frases de perigo

H228,H315,H319,H332,H335

Classificações de perigo

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Órgãos-alvo

Respiratory system

Código de classe de armazenamento

4.1B - Flammable solid hazardous materials

Classe de risco de água (WGK)

WGK 3

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable

Equipamento de proteção individual

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

Certificados de análise (COA)

Busque Certificados de análise (COA) digitando o Número do Lote do produto. Os números de lote e remessa podem ser encontrados no rótulo de um produto após a palavra “Lot” ou “Batch”.

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Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
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A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
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This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
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