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263265

Sigma-Aldrich

Gallium

99.99% trace metals basis

Synonym(s):

Elemental gallium

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About This Item

Linear Formula:
Ga
CAS Number:
7440-55-3
Molecular Weight:
69.72
MDL number:
MFCD00134045
UNSPSC Code:
12141715
PubChem Substance ID:
24855960
NACRES:
NA.23

Assay

99.99% trace metals basis

form

(metallic liquid or solid (ambient temp dependent))

resistivity

25.795 μΩ-cm, 30°C

bp

2403 °C (lit.)

mp

29.8 °C (lit.)

density

5.904 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

[Ga]

InChI

1S/Ga

InChI key

GYHNNYVSQQEPJS-UHFFFAOYSA-N

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General description

Gallium is a rareearth element that is widely used in smart electronic devices and integratedcircuits as it provides the advantages of low energy consumption and highcomputational speeds. Due to its high boiling point and low melting point, itexhibits a wide temperature range in the liquid state. It tends to formsulfate, chloride, and phosphate complexes due to its high charge. Thecompounds of gallium find applications in advanced semiconductors and LEDchips.

Application

Gallium can be used as a precursor to synthesize:
  • Gallium nitride and other Ga-based compounds for optoelectronic applications.
  • Sulfur/gallium hybrid cathode material for lithium-sulfur batteries. The surface of Ga metal promotes the redox reaction of lithium polysulfides due to its electrocatalytic effect.
  • Ga-based liquid alloys for the fabrication offlexible electronic devices.

Features and Benefits

  • Excellent conductor of heat and electricity
  • Wide temperature range in the liquid state
  • Lowvapor pressure at high temperature

Pictograms

CorrosionExclamation mark
GHS05,GHS07

Signal Word

Warning

Hazard Statements

H290,H302,H412

Hazard Classifications

Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1

Storage Class Code

8A - Combustible corrosive hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Previously unreported σ-phases in the ternary niobium-based systems Nb-X-Ga for X = Ru, Rh, Pd, Ir, Pt, Au, and Nb-X-Al for X = Ir, and Pt are presented, prepared by arc-melting followed by annealing at 1000 °C for 1 week.
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C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
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Nature communications, 5, 5461-5461 (2014-11-21)
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