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339113

Sigma-Aldrich

Tantalum(V) ethoxide

99.98% trace metals basis

Synonym(s):

Pentaethoxytantalum, Pentaethyl tantalate, Tantalum ethylate, Tantalum pentaethoxide, Tantalum(V) ethoxide

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About This Item

Linear Formula:
Ta(OC2H5)5
CAS Number:
6074-84-6
Molecular Weight:
406.25
Beilstein:
3678999
MDL number:
MFCD00049785
UNSPSC Code:
12352103
PubChem Substance ID:
24860612
NACRES:
NA.23

Assay

99.98% trace metals basis

form

liquid

reaction suitability

core: tantalum
reagent type: catalyst

impurities

<2 wt. % toluene

refractive index

n20/D 1.487 (lit.)

bp

155 °C/0.01 mmHg (lit.)

mp

21 °C (lit.)

density

1.566 g/mL at 25 °C (lit.)

SMILES string

CCO[Ta](OCC)(OCC)(OCC)OCC

InChI

1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5

InChI key

HSXKFDGTKKAEHL-UHFFFAOYSA-N

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General description

Tantalum(V) ethoxide Ta(OC2H5)5 is a tantalum alkoxide that can be used as a precursor in the preparation of tantalum oxide by chemical vapor deposition (CVD). It has excellent volatility and thermal stability. It can be synthesized by anodic oxidation of tantalum plate in anhydrous ethanol.

Application

Ta(OC2H5)5 can be used in the formation of ultrathin tantalum oxide based capacitors. It can also be used as a liquid precursor in the preparation of tantalum carbide nanopowder for hard coating on metal surfaces.

Pictograms

Flame
GHS02

Signal Word

Warning

Hazard Statements

H226

Hazard Classifications

Flam. Liq. 3

Storage Class Code

3 - Flammable liquids

WGK

WGK 1

Flash Point(F)

84.2 °F - closed cup

Flash Point(C)

29 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

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The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al.
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
I A Elsum et al.
Oncogene, 33(48), 5523-5533 (2013-11-28)
Lung cancer is the leading cause of cancer deaths worldwide with non small-cell lung cancer (NSCLC) accounting for 80% of all lung cancers. Although activating mutations in genes of the RAS-MAPK pathway occur in up to 30% of all NSCLC
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