Achromatic elemental mapping beyond the nanoscale in the transmission electron microscope.

Achromatic elemental mapping beyond the nanoscale in the transmission electron microscope.

Physical review letters (2013-05-21)

K W Urban, J Mayer, J R Jinschek, M J Neish, N R Lugg, L J Allen

ABSTRACT

Newly developed achromatic electron optics allows the use of wide energy windows and makes feasible energy-filtered transmission electron microscopy (EFTEM) at atomic resolution. In this Letter we present EFTEM images formed using electrons that have undergone a silicon L(2,3) core-shell energy loss, exhibiting a resolution in EFTEM of 1.35 Å. This permits elemental mapping beyond the nanoscale provided that quantum mechanical calculations from first principles are done in tandem with the experiment to understand the physical information encoded in the images.

MATERIALS

Product Number

Brand

Product Description

215619

Sigma-Aldrich

Silicon, powder, −325 mesh, 99% trace metals basis

343250

Sigma-Aldrich

Silicon, pieces, 99.95% trace metals basis

647772

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647675

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

647543

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647799

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647802

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

647764

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647535

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647705

Sigma-Aldrich

Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

633097

Sigma-Aldrich

Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

647101

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

646687

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

647780

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm