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326127

Sigma-Aldrich

Indium(III) nitrate hydrate

99.99% trace metals basis

Synonym(s):

Indium trinitrate hydrate, Indium(3+) trinitrate hydrate

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About This Item

Linear Formula:
In(NO3)3 · xH2O
CAS Number:
207398-97-8
Molecular Weight:
300.83 (anhydrous basis)
EC Number:
237-393-5
MDL number:
MFCD00149742
UNSPSC Code:
12352302
PubChem Substance ID:
24859563
NACRES:
NA.23

Assay

99.99% trace metals basis

form

powder and chunks

reaction suitability

reagent type: catalyst
core: indium

impurities

≤150.0 ppm Trace Metal Analysis

SMILES string

[In+3].[H]O[H].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O

InChI

1S/In.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1;

InChI key

YZZFBYAKINKKFM-UHFFFAOYSA-N

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General description

Indium(III) nitrate hydrate is an indium based precursor solution, which can be annealed at 500°C and spin coated to form indium oxide thin films.

Application

Indium(III) nitrate hydrate is used in the preparation of indium based substrates for the fabrication of semiconductor devices, such as thin film transistors.

Pictograms

Flame over circleExclamation mark
GHS03,GHS07

Signal Word

Danger

Hazard Statements

H272,H302 + H312 + H332

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Ox. Sol. 2

Storage Class Code

5.1B - Oxidizing hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles
Bagheri-Mohagheghi M-M, et al.
Physica E: Low-Dimensional Systems and Nanostructures, 41(10), 1757-1762 (2009)
Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method
Lau LN, et al.
Applied Surface Science, 345, 355-359 (2015)
High electrical performance of wet-processed indium zinc oxide thin-film transistors
Park K, et al.
IEEE Electron Device Letters, 31(4), 311-313 (2010)
William J Scheideler et al.
ACS applied materials & interfaces, 10(43), 37277-37286 (2018-10-10)
Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the

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