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Sigma-Aldrich

Hafnium

powder, −325 mesh, 99.5% trace metals basis (purity excludes ~2% zirconium), contains 1:10 pentanol to water solution as stabilizer

Synonym(s):

Celtium, Hafnium element

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About This Item

Empirical Formula (Hill Notation):
Hf
CAS Number:
Molecular Weight:
178.49
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

assay

99.5% trace metals basis (purity excludes ~2% zirconium)

form

powder

contains

1:10 pentanol to water solution as stabilizer

resistivity

29.6 μΩ-cm, 0°C

particle size

−325 mesh

bp

4602 °C (lit.)

mp

2227 °C (lit.)

density

13.3 g/cm3 (lit.)

SMILES string

[Hf]

InChI

1S/Hf

InChI key

VBJZVLUMGGDVMO-UHFFFAOYSA-N

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pictograms

Flame

signalword

Danger

hcodes

Hazard Classifications

Flam. Sol. 1 - Pyr. Sol. 1

Storage Class

4.2 - Pyrophoric and self-heating hazardous materials

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable


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Daqin Chen et al.
Chemical communications (Cambridge, England), 48(86), 10630-10632 (2012-09-27)
Novel Yb/Er(Tm):Na(3)MF(7) (M = Zr, Hf) nanocrystals with intrinsic single-band upconversion emission, in contrast to the routine lanthanide-doped fluoride nanocrystals which show typical multi-band upconversion emissions, are reported for the first time. Specifically, the red upconversion intensity of the Yb/Er:Na(3)ZrF(7)
Tingting Zhao et al.
Journal of biomedical materials research. Part B, Applied biomaterials, 100(3), 646-659 (2011-11-29)
Hafnium ion implantation was applied to NiTi alloy to suppress Ni ion release and enhance osteoblast-material interactions and hemocompatibility. The auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscope results showed that a composite TiO(2)/HfO(2) nanofilm with increased surface
Suresh Kumar Raman Pillai et al.
ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)
The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with
Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect
Liu Hao et al.
Optics express, 20(1), 698-705 (2012-01-26)
Conditioning effect on HfO2 single-layer film by quasi-cw laser was investigated. The conditioning process was monitored with laser calorimeter. Experimental results revealed that the HfO2 film absorption decreased as a function of the irradiation dose. Higher laser power accelerated the

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