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Sigma-Aldrich

Hafnium

wire, diam. 1.0 mm, ≥99.9% trace metals basis (purity excludes ~2% zirconium)

Synonym(s):

Celtium, Hafnium element

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About This Item

Empirical Formula (Hill Notation):
Hf
CAS Number:
7440-58-6
Molecular Weight:
178.49
EC Number:
231-166-4
MDL number:
MFCD00011032
UNSPSC Code:
12352300
PubChem Substance ID:
24856159

Quality Level

100

assay

≥99.9% trace metals basis (purity excludes ~2% zirconium)

form

wire

resistivity

29.6 μΩ-cm, 0°C

diam.

1.0 mm

bp

4602 °C (lit.)

mp

2227 °C (lit.)

density

13.3 g/cm3 (lit.)

SMILES string

[Hf]

InChI

1S/Hf

InChI key

VBJZVLUMGGDVMO-UHFFFAOYSA-N

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Quantity

2 g = 20 cm

Storage Class

13 - Non Combustible Solids

wgk_germany

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Daqin Chen et al.
Chemical communications (Cambridge, England), 48(86), 10630-10632 (2012-09-27)
Novel Yb/Er(Tm):Na(3)MF(7) (M = Zr, Hf) nanocrystals with intrinsic single-band upconversion emission, in contrast to the routine lanthanide-doped fluoride nanocrystals which show typical multi-band upconversion emissions, are reported for the first time. Specifically, the red upconversion intensity of the Yb/Er:Na(3)ZrF(7)
Xuelu Ma et al.
Physical chemistry chemical physics : PCCP, 15(3), 901-910 (2012-12-04)
In this paper, the reaction mechanisms of CO assisted N(2) cleavage and functionalization activated by a dinuclear hafnium complex are studied using a density function theory (DFT) method. Several key intermediates (Ia, Ib, Ic and Id) with axial/equatorial N=C=O coordination
Suresh Kumar Raman Pillai et al.
ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)
The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with
Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect
José Luis Olivares-Romero et al.
Journal of the American Chemical Society, 134(12), 5440-5443 (2012-03-17)
Asymmetric epoxidation of allylic and homoallylic amine derivatives catalyzed by Hf(IV)-bishydroxamic acid complexes is described. Under similar conditions, aldimine and ketimine produced oxaziridines. The sulfonyl group is demonstrated to be an effective directing group for these transformations.
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