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Key Documents

419354

Sigma-Aldrich

p-Tolyltrichlorosilane

95%

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About This Item

Linear Formula:
CH3C6H4SiCl3
CAS Number:
Molecular Weight:
225.57
EC Number:
MDL number:
UNSPSC Code:
12352002
PubChem Substance ID:
NACRES:
NA.22

Quality Level

assay

95%

form

liquid

refractive index

n20/D 1.5240 (lit.)

bp

218-220 °C (lit.)

density

1.273 g/mL at 25 °C (lit.)

SMILES string

Cc1ccc(cc1)[Si](Cl)(Cl)Cl

InChI

1S/C7H7Cl3Si/c1-6-2-4-7(5-3-6)11(8,9)10/h2-5H,1H3

InChI key

WOMUGKOOLXQCTQ-UHFFFAOYSA-N

Application

Self-assembled monolayers (SAMs) of p-tolyltrichlorosilane (TTCS) were formed on flexible polymer substrates. p-Tolyltrichlorosilane copolymerized with methylphenyldichlorosilane was grafted on silicon to introduce a structural defect.

pictograms

Corrosion

signalword

Danger

hcodes

Hazard Classifications

Eye Dam. 1 - Skin Corr. 1B

supp_hazards

Storage Class

8A - Combustible corrosive hazardous materials

wgk_germany

WGK 3

flash_point_f

210.2 °F - closed cup

flash_point_c

99 °C - closed cup

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter


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Effects of structural defects on hole drift mobility in aryl-substituted polysilanes.
Philosophical Magazine Part B, 79(10), 1631-1645 (1999)
Ignazio Blanco et al.
Molecules (Basel, Switzerland), 25(13) (2020-07-02)
Novel polystyrene (PS)/polyhedral oligomeric silsequioxanes (POSSs) nanocomposites were designed and prepared by in situ polymerization, using, for the first time, three-cage POSS molecules. The synthesized compounds were first characterized by Fourier transform infrared spectroscopy (FTIR) and 1H NMR spectroscopy to
Fabrication of self-assembled monolayers (SAMs) and inorganic micropattern on flexible polymer substrate.
Langmuir, 20(8), 3278-3283 (2004)
Ignazio Blanco et al.
Polymers, 12(11) (2020-11-25)
A comprehensive kinetics degradation study is carried out on novel multiple cages polyhedral oligomeric silsesquioxane (POSS)/polystyrene (PS) composites at 5% (w/w) of POSS to assess their thermal behavior with respect to the control PS and other similar POSS/PS systems studied

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