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401080

Sigma-Aldrich

Bismuth(III) selenide

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Synonym(s):

Bismuth selenide

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About This Item

Empirical Formula (Hill Notation):
Bi2Se3
CAS Number:
12068-69-8
Molecular Weight:
654.84
EC Number:
235-104-7
MDL number:
MFCD00014200
UNSPSC Code:
12352300
PubChem Substance ID:
24864986
NACRES:
NA.23

form

solid

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density

6.82 g/mL at 25 °C (lit.)

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, Enabling

SMILES string

[Se]=[Bi][Se][Bi]=[Se]

InChI

1S/2Bi.3Se

InChI key

OMEPJWROJCQMMU-UHFFFAOYSA-N

General description

Bismuth(III) selenide (Bi2Se3) is a semiconducting thermoelectric material with a narrow band gap. It forms thin films by different techniques, which include solution growth, electrodeposition and molecular jet method. It acts as a topological insulator based saturable absorber.
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Application

Bi2Se3 is a metal selenide, which can be used for a variety of applications such as solar cells, light emitting diodes (LEDs), and superionic conductor. Its optical properties include a high absorption coefficient larger than 104 cm-1 and a band gap of 0.35 eV.

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Danger

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 2

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges

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Certificates of Analysis (COA)

Lot/Batch Number
MKCK5540
MKCK5549
MKCD6956
MKCB0281V
MKCB0155V

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Chemical deposition and characterization of glassy bismuth (III) selenide thin films
Pejova B and Grozdanov I
Thin Solid Films, 408(1-2), 6-10 (2002)
Q-switched ytterbium-doped fiber laser with topological insulator-based saturable absorber
Al-Masoodi AHH, et al.
Optical Engineering, 56(5), 056103-056103 (2017)
Electrodeposition and characterization of copper bismuth selenide semiconductor thin films
Li J, et al.
Electrochimica Acta, 87(1-2), 153-157 (2013)
Optical and thermal band gap energy of chemically deposited bismuth (III) selenide thin films
Pejova B, et al.
Materials Chemistry and Physics, 83(2-3), 245-249 (2004)

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