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203351

Sigma-Aldrich

Germanium

powder, −100 mesh, ≥99.99% trace metals basis

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About This Item

Empirical Formula (Hill Notation):
Ge
CAS Number:
Molecular Weight:
72.64
EC Number:
MDL number:
UNSPSC Code:
12141716
PubChem Substance ID:
NACRES:
NA.23

Quality Level

assay

≥99.99% trace metals basis

form

powder

resistivity

53 Ω-cm, 20°C

particle size

−100 mesh

bp

2830 °C (lit.)

mp

937 °C (lit.)

density

5.35 g/mL at 25 °C (lit.)

SMILES string

[Ge]

InChI

1S/Ge

InChI key

GNPVGFCGXDBREM-UHFFFAOYSA-N

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signalword

Danger

Hazard Classifications

Aquatic Acute 1 - Aquatic Chronic 2 - Flam. Sol. 1 - Repr. 2 - STOT RE 2 Oral

target_organs

Kidney

Storage Class

4.1B - Flammable solid hazardous materials

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


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Minxian Wu et al.
Physical chemistry chemical physics : PCCP, 15(14), 4955-4964 (2013-02-27)
The electrodeposition of germanium from the ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide ([BMP][DCA]) and a mixture of [BMP][DCA] and 1-butyl-1-methylpyrrolidinium chloride ([BMP]Cl) was studied using cyclic voltammetry and using an electrochemical quartz crystal microbalance (EQCM). [GeCl4(BuIm)2] (BuIm = N-butylimidazole) was used as
Miroslav Cerný et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035401-035401 (2012-12-15)
The response of three covalent crystals with a diamond lattice (C, Si and Ge) to uniaxial and a special triaxial (generally nonhydrostatic) loading is calculated from first principles. The lattice deformations are described in terms of variations of bond lengths
Jian-Qiang Shen et al.
Dalton transactions (Cambridge, England : 2003), 42(16), 5812-5817 (2013-03-05)
An unprecedented organic-inorganic hybrid germanoniobate compound Na4[Cu(en)2(H2O)2]5[Na6Ge8Nb32O108H8(OH)4]·41H2O (1) was synthesized under the hydrothermal condition. In compound 1, the {Nb16} cage containing four {GeO4} tetrahedra in its internal cavity results in a heteropolyniobate anion [H4Ge4Nb16O54(OH)2](10-) ({Ge4Nb16}), which is connected by a
Fabian von Rohr et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 075804-075804 (2013-01-25)
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi(4)Te(7), GeSb(4)Te(7) and Ge(Bi(1-x)Sb(x))(4)Te(7) solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in

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